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Namphung Peimyoo PhD

Postdoctoral Research Associate

Namphung Peimyoo received her BSc in Physics in 2007 from Kasetsart University, Thailand, after which she received funding from the Thailand Graduate Institute of Science and Technology (TGIST) to continue her postgraduate studies. During her Master’s study, Namphung was awarded a place on a student exchange programme at Nanyang Technological University (NTU), Singapore, which allowed her to join the research group of Prof. Ting Yu.

Following the completion of her MSc in Physics in 2010, Namphung was awarded a PhD research scholarship at NTU Singapore to further explore opportunities in the field of light-matter interaction of atomically thin two-dimensional materials such as graphene and transition metal dichalcogenides. During her PhD research, Namphung uncovered several novel fundamental aspects in the science of these emerging materials. After graduating from NTU, she then joined the Centre for Graphene Science at the University of Exeter for three years as a postdoctoral researcher where she developed two-dimensional materials and van der Waals heterostructures for nanoelectronic and optoelectronic applications, including flexible field-effect transistors, light-emitting diodes and photodetectors. In 2019, Namphung joined the Almquist Lab at Imperial College London, where she is working with the multi-disciplinary team to use nanofabrication to unlock new possibilities in fields ranging from neuroscience to synthetic biology.

Education

2019–Present

Imperial College London

Postdoctoral Researcher

2016–2019

University of Exeter

Postdoctoral Researcher

2015–2016

Nanyang Technological University

Research Associate

2015

Nanyang Technological University

PhD Physics

2010

Kasetsart University

MSc Physics

2008

Kasetsart University

BSc Physics


Publications

Laser-writable high-k dielectric for van der Waals nanoelectronics

Peimyoo N, Barnes MD, Mehew JD, De Sanctis A, Amit I, Escolar J, Anastasiou K, Rooney AP, Haigh SJ, Russo S, Craciun MF, Withers F. Science Advances, 5, eaau0906 (2019).

Anisotropic magnetoconductance and Coulomb blockade in defect engineered Cr2Ge2Te6 van der Waals heterostructures

Escolar J, Peimyoo N, Craciun MF, Fernandez HA, Russo S, Barnes MD, Withers F. Physical Review B, 100, 054420 (2019).

Engineering Valley Polarization of Monolayer WS2: A Physical Doping Approach

Feng S, Cong C, Konabe S, Zhang J, Shang J, Chen Y, Zou C, Cao B, Wu L, Peimyoo N, Zhang B, Yu T. Small, 15, 1805503 (2019).

Unveiling exceptionally robust valley contrast in AA- and AB-stacked bilayer WS2

Wang Y, Cong C, Shang J, Eginligil M, Jin Y, Li G, Chen Y, Peimyoo N, Yu T. Nanoscale Horizons, 4, 396-403 (2019).

Tunable excitonic emission of monolayer WS2 for the optical detection of DNA nucleobases

Feng S, Cong C, Peimyoo N, Chen Y, Shang J, Zou C, Cao B, Wu L, Zhang J, Eginligil M, Wang X, Xiong Q, Ananthanarayanan A, Chen P, Zhang B, Yu T. Nano Research, 11, 1744-1754 (2018).

Room-temperature 2D-semiconductor activated vertical-cavity surface-emitting lasers

Shang J, Cong C, Wang Z, Peimyoo N, Wu L, Zou C, Chen Y, Chin X, Wang J, Soci C, Huang W, and Yu T. Nature Communications, 8, 543 (2017).

Revealing electronic nature of broad bound exciton bands in two-dimensional semiconducting WS2 and MoS2

Shang J, Cong C, Shen X, Yang W, Zou C, Peimyoo N, Cao B, Eginligil M, Lin W, Huang W, Yu T. Physical Review Materials, 1, 074001 (2017).

Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2

Yang W, Shang J, Wang J, Shen X, Cao B, Peimyoo N, Zou C, Chen Y, Wang Y, Cong C, Huang W, Yu T. Nano Letters, 16, 1560-1567 (2016).

Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2

Wang Y, Cong C, Yang W, Shang J, Peimyoo N, Chen Y, Kang J, Wang J, Huang W, Yu T. Nano Research, 8, 2562–2572 (2015).

Thermal conductivity determination of suspended mono- and bilayer WS2 by Raman spectroscopy

Peimyoo N, Shang J, Yang W, Wang Y, Yu T. Nano Research, 8, 1210–1221 (2015).

Observation of Excitonic Fine Structure in a 2D Transition-Metal Dichalcogenide Semiconductor

Shang J, Shen X, COng C, Peimyoo N, Cao B, Eginligil M, Yu T. ACS Nano, 9, 647-655 (2015).

Chemically driven tunable light emission of charged and neutral excitons in monolayer WS2

Peimyoo N, Yang W, Shang J, Shen X, Wang Y, Yu T. ACS Nano, 8, 11320-11329 (2014).

Synthesis and Optical Properties of Large‐Area Single‐Crystalline 2D Semiconductor WS2 Monolayer from Chemical Vapor Deposition

Cong C, Shang J, Wu X, Cao B, Peimyoo N, Qiu C, Sun L, Yu T. Advanced Optical Materials, 2, 131-136 (2014).

Nonblinking, intense two-dimensional light emitter: monolayer WS2 triangles

Peimyoo N, Shang J, Cong C, Shen X, Wu X, Yeow EKL, Yu T. ACS Nano, 7, 10985-10994 (2013).

Photocontrolled Molecular Structural Transition and Doping in Graphene

Peimyoo N, Li J, Shang J, Shen X, Qiu C, Xie L, Huang W, Yu T. ACS Nano, 6, 8878-8886 (2012).

Thickness-dependent azobenzene doping in mono- and few-layer graphene

Peimyoo N, Yu T, Shang J, Cong C, Yang H. Carbon, 50, 201-208 (2012).